| PART |
Description |
Maker |
| UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM
x8 SDRAM
x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
| HYM72V32736BLT8-K HYM72V32736BT8-K HYM72V32736BT8- |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM - Unbuffered DIMM 256MB
x64 SDRAM Module
|
Hynix Semiconductor
|
| UPD45256163G5-A10L-9JF UPD45256163G5-A10B-9JF UPD4 |
x16 SDRAM
|
NEC Electronics Inc
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| HYB39S64160BTL-7.5 |
x16 SDRAM x16内存
|
Infineon Technologies AG
|
| MT48LC4M16A2P-6A |
64Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| HY57V281620ALT-10 |
x16 SDRAM x16内存
|
Hynix Semiconductor, Inc.
|
| MT47H64M16HR-25ELH |
1Gb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| 64M16 256M4 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| HYMD264646AL8-H HYMD264646AL8-K HYMD264646A8-H HYM |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
