PART |
Description |
Maker |
IRFZ40 IRFZ42 |
(IRFZ40 / IRFZ42) Power Field Effect Transistors
|
Motorola Semiconductor
|
MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor MOTOROLA[Motorola, Inc]
|
RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS (RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
IRFD112 IRFD113 |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
MRF19060 MRF19060R3 MRF19060SR3 |
RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
MRF18060AL MRF18060A MRF18060ALR3 MRF18060ALSR3 |
RF Power Field Effect Transistors 1805?1880 MHz, 60 W, 26 V Lateral N?Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc Motorola Semiconductor Products
|
MTW10N40E |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Motorola Mobility Holdings, Inc.
|
NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
MRF9135LR3 MRF9135L MRF9135LSR3 |
MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc
|
APTGT100A60T1G |
Phase leg Trench Field Stop IGBT? Power Module Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
APTGT75DA60T1G |
Boost chopper Trench Field Stop IGBT? Power Module Boost chopper Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
APTGT25X120T3G |
3 Phase bridge Trench Field Stop IGBT? Power Module 3 Phase bridge Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|