PART |
Description |
Maker |
IBM11T4645MP-50 |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
International Business Machines, Corp.
|
MSC2313258A-XXDS2 MSC2313258A-XXBS2 MSC2313258A |
1048576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576字32位DRAM模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
HYM564214AH-60 HYM572103LN-70 HYNIXSEMICONDUCTORIN |
2M X 64 EDO DRAM MODULE, DMA200 1M X 72 FAST PAGE DRAM MODULE, DMA168 2M X 64 FAST PAGE DRAM MODULE, DMA72 1M X 64 EDO DRAM MODULE, DMA72 2M X 32 EDO DRAM MODULE, DMA72
|
HYNIX SEMICONDUCTOR INC
|
HB56U432SB-6N HB56U832B-5NL HB56U832B-7NL |
x32 EDO Page Mode DRAM Module X32号,江户页面模式内存模块
|
Altera, Corp.
|
MSC23V26457TA-XXBS8 MSC23V26457SA-XXBS8 MSC23V2645 |
2,097,152-Word x 64-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24 x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
MSC2343257A-XXDS8 MSC2343257A MSC2343257A-XXBS8 |
4,194,304-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304字32位DRAM模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
AS4C14400-50TC AS4C14400-50JC |
1M-bit 4 CMOS DRAM (Fast page mode or EDO) 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20 1M-bit ??4 CMOS DRAM (Fast page mode or EDO)
|
Alliance Semiconductor, Corp. ALLIANCE SEMICONDUCTOR CORP
|