| PART |
Description |
Maker |
| U632H64BDC45 U632H64BD1C45 U632H64BSC45 U632H64DC4 |
Precision single operational amplifier
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Glenair, Inc.
|
| DS1646-120 DS1646P-120 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International, Corp.
|
| FM1208-100DC FM1208-150PC |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Samtec, Inc.
Ramtron International, Corp.
|
| DS1250W-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
3M Company
|
| CA500A126 CA500A101 CA500A111 CA500A112 CA500A117 |
Serial real-time clock with 44 bytes NVRAM and reset
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
5V or 3V NVRAM supervisor for up to two LPSRAMs
5V or 3V NVRAM supervisor for up to 8 LPSRAMs
Serial real-time clock 逻辑IC
|
TE Connectivity, Ltd.
|
| STM32L073V8 |
Ultra-low-power 32-bit MCU ARM-based Cortex-M0 , up to 192KB Flash, 20KB SRAM, 6KB EEPROM, LCD, USB, ADC, DACs
|
STMicroelectronics
|
| DS1250Y-70 DS1250Y-70-IND DS1250Y-100-IND DS1250AB |
NVRAM (Battery Based)
From old datasheet system
NOVRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Dallas Semiconductor Corp
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| M68HC711CFD M68HC711CFG M68HC711CFG_D M68HC711CFG/ |
CONFIG Register Programming for EEPROM-based M68HC11 Microcontrollers
CONFIG REGISTER PROGRAMMING FOR EEPROM-BASED MHC MICROCONTROLLERS
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Freescale (Motorola)
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
| AN1120 |
EEPROM-BASED APPLICATION SPECIFIC MEMORIES
|
SGS Thomson Microelectronics
|
|
