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APT4F120K - 1200V, 4A, 4.2Ω Max Trr ?95nS

APT4F120K_2246676.PDF Datasheet


 Full text search : 1200V, 4A, 4.2Ω Max Trr ?95nS


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Fairchild Semiconductor, Corp.
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IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
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IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
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From old datasheet system
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INFINEON[Infineon Technologies AG]
QIQ1245001 POWEREXINC-QIQ1245001 Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode
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BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
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NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak
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From old datasheet system
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SP800LEN/TR SP800MEN/TR SP691AEN/TR SP693AEN/TR SP Low Power Microprocessor Supervisory with Battery Switch-Over 低功耗微处理器监控与电池开关过
Thyristor Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current, It av:55A; Gate Trigger Current Max, Igt:2A; Leaded Process Compatible:Yes; Package/Case:CM43; Current Rating:55A RoHS Compliant: Yes
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:1600V; Current, It av:500A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD42; di/dt:200A/ s RoHS Compliant: Yes
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:1800V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; di/dt:200A/ s; Package/Case:LD43 RoHS Compliant: Yes
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Datamate J-Tek DIL Male Horizontal 4.5mm PC Tail Connector, selective gold tin, with jackscrews, 21 21-way
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Intersil, Corp.
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Pch Power MOSFET; Surface Mount Type: N; Package: VS-6; R DS On (Ω): (max 0.09) (max 0.055) (max 0.035); I_S (A): (max -5.5)
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