| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF178XR112 SOT539A BLF178XRS |
Power LDMOS transistor
|
NXP Semiconductors
|
| LP701-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF6G10S-45 |
Power LDMOS Transistor
|
Philips Semiconductors
|
| BLF6G10LS-135R |
Power LDMOS transistor
|
NXP Semiconductors
|
| LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLP15M7160P |
Power LDMOS transistor
|
NXP Semiconductors
|
| LR301-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| LX723-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| AFT26H200W03SR6 |
RF Power LDMOS Transistor
|
NXP Semiconductors
|
