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IDT101A474S7D - x4 SRAM x4的SRAM

IDT101A474S7D_2245652.PDF Datasheet


 Full text search : x4 SRAM x4的SRAM
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x4SRAM

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R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 4M High Speed SRAM (256-kword x 16-bit)
Memory>Fast SRAM>Asynchronous SRAM
SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
AS5C4009LLDG-100/XT AS5C4009LLDG-100/IT AS5C4009LL 512K*8 SRAM ultra Low power SRAM AVAILABLE AS MILITARY SPECIFICATION
x8 SRAM x8的SRAM
Austin Semiconductor, Inc
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word Burst
Renesas Technology / Hitachi Semiconductor
GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H 100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
GSI Technology, Inc.
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
   2.5V 512K x 32/36 flowthrough burst synchronous SRAM
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K 128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM(存取时7ns
128Kx8 3.3单片的SRAM28Kx83.3伏,单片静态随机存储器(存取时间为35ns))
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
128K X 8 STANDARD SRAM, 20 ns, CDFP32
White Electronic Designs Corporation
White Electronic Designs, Corp.
 
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