| PART |
Description |
Maker |
| AM99CL641 AM99CL641-25DC AM99CL641-25DCB AM99CL641 |
x1 SRAM x1的SRAM
x1SRAM
66,536x1 Static Read/Write Random-Access Memory
|
Ironwood Electronics
Advanced Micro Devices
|
| 4120R-601-250/101 4420P-601-470/101 4120R-601-250/ |
RNET - THK FILM MOLD DIP 10 FUNCTIONS, 25 V, DATA LINE FILTER
RNET-RC NETS, T-FILTERS 10 FUNCTIONS, 25 V, DATA LINE FILTER
RC Networks T-Filters
|
TE Connectivity, Ltd.
Bourns, Inc.
BOURNS INC
Bourns Electronic Solutions
|
| 4108R-2-103 4116R-1-562LF 4116R-2-470 4114R-1-122L |
RNET - THK FILM MOLD DIP RESISTOR, NETWORK, FILM, BUSSED, 1.69 W, THROUGH HOLE MOUNT
RES NET ISOLATED 5.6K OHM 16-DIP RESISTOR, NETWORK, FILM, ISOLATED, 2.25 W, THROUGH HOLE MOUNT
RES NET BUSSED 47 OHM 16-DIP RESISTOR, NETWORK, FILM, BUSSED, 2.25 W, THROUGH HOLE MOUNT
RNET - THK FILM MOLD DIP RESISTOR, NETWORK, FILM, ISOLATED, 2 W, THROUGH HOLE MOUNT
RNET - THK FILM MOLD DIP RESISTOR, NETWORK, FILM, BUSSED, 2 W, THROUGH HOLE MOUNT
3NET - THK FILM MOLD DIP RESISTOR, NETWORK, FILM, BUSSED, 2 W, THROUGH HOLE MOUNT
RNET - THK FILM MOLD DIP RESISTOR, NETWORK, FILM, TERMINATOR, 2 W, THROUGH HOLE MOUNT
|
Bourns, Inc.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS5C2568 AS5C2568DJ-20_XT AS5C2568DJ-12_883C AS5C2 |
SRAM
32K x 8 SRAM SRAM MEMORY ARRAY
SRAM 静态存储器
|
ETC
AUSTIN[Austin Semiconductor]
Electronic Theatre Controls, Inc.
|
| 2QSP20-RJ1-680LF 2QSP20-RF1-680LF 2NBS08-TF1-472LF |
RNET - THIN FILM RESISTOR, NETWORK, FILM, ISOLATED, 1 W, SURFACE MOUNT
RNET - THIN FILM RESISTOR, NETWORK, FILM, ISOLATED, 0.6 W, SURFACE MOUNT
RNET - THIN FILM RESISTOR, NETWORK, FILM, ISOLATED, 0.75 W, SURFACE MOUNT
Thin Film on Silicon 2QSP / 2NBS -XX1 Isolated Resistors RESISTOR, NETWORK, FILM, ISOLATED, 1 W, SURFACE MOUNT
Thin Film on Silicon 2QSP / 2NBS -XX1 Isolated Resistors RESISTOR, NETWORK, FILM, ISOLATED, 0.75 W, SURFACE MOUNT
|
Bourns, Inc.
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
|
