| PART |
Description |
Maker |
| GSM31P256KB-I66 GSM31P512KB-I66 |
x64 Interleaved Burst Mode SRAM Module
256KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统56KB二级高速缓冲存储器)
512KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统12KB二级高速缓冲存储器)
|
GSI Technology
|
| GMM7362000BS-70 GMM7362000BS-60 |
x36 Fast Page Mode DRAM Module x36快速页面模式内存模
|
Chicago Miniature Lighting, LLC
|
| HYM536A410ASLM-50 HYM536A410AM-50 HYM536A410AMG-50 |
x36 Fast Page Mode DRAM Module x36快速页面模式内存模
|
NXP Semiconductors N.V.
|
| AK5364096WP60 |
x36 Fast Page Mode DRAM Module x36快速页面模式内存模
|
ADC Telecommunications
|
| MB82DBS02163E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode
|
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| NU-33B54B-P-A NU-33B54B-R-A |
155 Mbps 1310 nm Burst Mode TX / 622 Mbps 1490 nm Continuous-Mode RX 3.3V, 2X5 SFF Package, Class B B-PON ONU Transceiver
|
Optoway Technology Inc.
|
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| LT-74D73D-PG |
3.3V, 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX 2X5 SFF Package, GE-PON OLT Transceiver (IEEE 802.3ah-2004 1000BASE PX10)
|
Optoway Technology Inc
|
| LT-74D73D-PG |
3.3V, 1.25 Gbps 1490 nm Continuous-Mode TX / 1.25 Gbps 1310 nm Burst-Mode RX 2X5 SFF Package, GE-PON OLT Transceiver (IEEE 802.3ah-2004 1000BASE PX10)
|
Optoway Technology Inc.
|
| MAX3643ETG_ MAX3643 MAX3643ETG |
Burst-Mode Laser Driver
|
MAXIM[Maxim Integrated Products]
|
| AN1114 |
BURST MODE TRIAC CONTROL
|
ST Microelectronics
|
