| PART |
Description |
Maker |
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HMT125S6AFP8C-G7 HMT125S6AFP8C-G8 HMT125S6AFP8C-H8 |
204pin DDR3 SDRAM SODIMMs
128M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
64M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
DDR DRAM MODULE, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| KMM466F404CS2-L |
4M X 64 DRAM SODIMM
|
Samsung Semiconductor
|
| HYMP564S64BP6-S5 HYMP564S64BP6-Y5 HYMP532S64BLP6-Y |
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| HYM71V8M635BT6-K HYM71V8M635BT6-H HYM71V8M635BLT6- |
8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 SODIMM-144
|
Hynix Semiconductor, Inc.
|
| M470T2953CZ0-LD5 M470T2953CZ3-LD5 |
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Samsung Semiconductor Co., Ltd.
|
| HYMP125S64CP6-S5 HYMP125S64CP6-S6 HYMP125S64CP6-Y5 |
256M X 64 DDR DRAM MODULE, 0.4 ns, DMA200 ROHS COMPLIANT, SODIMM-200
256M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HYMP532U64CP6-Y5 HYMP512U64CP8-C4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA240 ROHS COMPLIANT, SODIMM-240
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
|
