| PART |
Description |
Maker |
| STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| 2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ32 |
P-channel enhancement type
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR
|
NEC Corp.
|
| MSP3407 |
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSN0318W |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSC0311WE |
30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| FDN372S |
30V N-Channel PowerTrenchSyncFET 2600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
30V N-Channel PowerTrench SyncFET
|
Fairchild Semiconductor, Corp.
|
| FDS6670AS08 FDS6670AS |
30V N-Channel PowerTrench? SyncFET
30V N-Channel PowerTrench庐 SyncFET??/a>
30V N-Channel PowerTrench㈢ SyncFET⑩
|
Fairchild Semiconductor
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
