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NE5511279A-T1A-A - 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

NE5511279A-T1A-A_2456302.PDF Datasheet


 Full text search : 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
 Product Description search : 7.5 V UHF BAND RF POWER SILICON LD-MOS FET


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From old datasheet system
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UTV120 UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
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From old datasheet system
TOSHIBA[Toshiba Semiconductor]
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NE5511279A-T1A-A taping code NE5511279A-T1A-A Mount NE5511279A-T1A-A maxim NE5511279A-T1A-A chip NE5511279A-T1A-A Outputs
 

 

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