| PART |
Description |
Maker |
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| IS62WV5128ALL-70TI IS62WV5128BLL IS62WV5128BLL-55T |
512K X 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| BS62UV4000STI BS62UV4000 BS62UV4000EC BS62UV4000EI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
|
BSI[Brilliance Semiconductor]
|
| MAX6332UR20D3-T MAX6333UR20D3-T MAX6334UR20D3-T MA |
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 20ms.
3-Pin, Ultra-Low-Voltage, Low-Power P Reset Circuits
3-Pin, Ultra-Low-Voltage, Low-Power μP Reset Circuits
3-Pin Ultra-Low-Voltage Low-Power P Reset Circuits
From old datasheet system
3-Pin, Ultra-Low-Voltage, Low-Power レP Reset Circuits
3-Pin / Ultra-Low-Voltage / Low-Power P Reset Circuits
TV 79C 79#22D SKT RECP 3引脚，超低电压，低功耗レP复位电路
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 1ms.
|
MAXIM - Dallas Semiconductor
http://
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| HY29LV800 HY29LV800T-55 HY29LV800T-55I HY29LV800T- |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory 8兆位00万x 8/512K × 16）低压快闪记忆体
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AT27LV040A07 AT27LV040A-90JI AT27LV040A-90JU AT27L |
4-Megabit (512K x 8) Low Voltage OTP EPROM
90NS, PLCC, IND TEMP, GREEN(EPROM) 512K X 8 OTPROM, 90 ns, PQCC32
|
ATMEL Corporation
Atmel, Corp.
|
| BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| NCP702MX30TCG NCP702SN18T1G NCP702SN28T1G NCP702SN |
200 mA, Ultra-Low Quiescent Current, Ultra-Low Noise, LDO Linear Voltage Regulator
|
ON Semiconductor
|
| NCV8703MX30TCG NCV8703MX18TCG NCV8703MX28TCG NCV87 |
300 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, LDO Voltage Regulator
|
ON Semiconductor
|
| N08L63W2AB27I N08L63W2AB27IT N08L63W2AB7I N08L63W2 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
|
ON Semiconductor
|
