| PART |
Description |
Maker |
| W3EG6432S265D3 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED
|
White Electronic Designs Corporation
|
| NT512D72S4PA0GR-75B NT512D72S4PA0GR-7K NT512D72S4P |
256Mb: 64Mx72; unbuffered DDR SDRAM module based on 64Mx4 DDR SDRAM
|
NANYA
|
| NT256D72S4PA0GR-75B NT256D72S4PA0GR-7K NT256D72S4P |
256Mb: 32Mx72 DDR SDRAM module based on 32Mx4 DDR SDRAM
|
NANYA
|
| NT256S64VH8A0GM-75B NT256S64VH8A0GM-7K NT256S64VH8 |
256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| M470L3224DT0 M470L3224DT0-CA0 M470L3224DT0-CA2 M47 |
256MB DDR SDRAM MODULE
|
Samsung semiconductor
|
| WED3DG6435V-D1 WED3DG6435V-JD1 WED3DG6435V10JD1 WE |
256MB - 32Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WED3DG6435V75JD1 |
256MB - 32Mx64 SDRAM UNBUFFERED
|
White Electronic Design...
|
| WED3DG6432V-D1 WED3DG6432V75D1 WED3DG6432V7D1 WED3 |
256MB- 32Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
