| PART |
Description |
Maker |
| BUK437-400A |
(BUK437-400A/B) Power MOS Transistor
|
Philips
|
| BUK437-500A |
(BUK437-500A/B) Power MOS Transistor
|
Philips
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| NESG3031M14NBSP NESG3031M14-T3 NESG3031M14 |
From old datasheet system
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC[NEC]
|
| APT8067HVR |
POWER MOS V 800V 11.5A 0.670 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6032AVR |
POWER MOS V 600V 17.5A 0.320 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065 |
POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M45SVFR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8075BVR APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 12A 0.750 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT30M40JVR |
POWER MOS V 300V 70A 0.040 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8028JVR APT5010JVR |
POWER MOS V 800V 28A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
