PART |
Description |
Maker |
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation Integrated Silicon Solution, Inc. Lattice Semiconductor, Corp.
|
HY5116164BSLTC-60 HY5116164BJC-60 HY5116164BSLJC-8 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Omron Electronics, LLC Infineon Technologies AG
|
V53C311816502K-60 V53C311816502K-60I V53C311816502 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
NEC, Corp.
|
GM71V18163CJ-6E |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Hynix Semiconductor, Inc.
|
IBM015160NJ3A-60 IBM015161NJ3A-60 |
x16 Fast Page Mode DRAM x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Optrex America, Inc.
|
HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 |
x16 EDO Page Mode DRAM
|
|
IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|
HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns 4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns 4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM 4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM -4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
IBM11N4735BB-70 IBM11N4645BB-60 |
x72 EDO Page Mode DRAM Module x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M x 72 Bit ECC DRAM Module unbuffered 4M x 64 Bit DRAM Module unbuffered 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组 GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
IBM11N4645CB-60J IBM11N4735CB-50J |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块 x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd. Electronic Theatre Controls, Inc.
|
HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|