| PART |
Description |
Maker |
| M5M44405CTP-6S M5M44405CJ-5S |
EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM 江户（超页模式）4194304位（1048576 - Word位）动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MH1M144CXTJ-6 MH1M144CXTJ |
FAST PAGE MODE 150994944-BIT (1048576-WORD BY 144-BIT)DYNAMIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MSM56V16800D MSM56V16800DH |
2-Bank?1,048,576-Word?8-Bit Synchronous Dynamic RAM(2缁??,048,576瀛??浣??姝ュ???AM)
2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2组,048,576字位同步动态RAM)
2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| HN29WT800 29WT800 |
1048576-word ′ 8-bit / 524288-word ′ 16-bit CMOS Flash Memory
From old datasheet system
|
hitachi
|
| M5M44400BJ M5M44400BL M5M44400BRT-5 M5M44400BRT-5S |
FAST PAGE MODE 4194304-BIT(1048576-WORD BY 4-BIT)DYNAMIC RAM
(BJ/L/TP/RT) Fast Page Mode 4MBit DRAM
|
Mitsubishi Electric Semiconductor
|
| TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM
1048576 x 4 BIT DYNAMIC RAM
Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
|
http://
Toshiba Semiconductor
Toshiba Corporation
|
| M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ-15 |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
|
| M5M5V108DVP M5M5V108DFP M5M5V108DFP-70H M5M5V108DK |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
RENESAS[Renesas Electronics Corporation]
|
| MH1S64CWXTJ-1539 MH1S64CWXTJ-12 MH1S64CWXTJ-15 MH1 |
67108864-BIT (1048576-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M28F101AFP |
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
