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AWT921S11 - Integrated High Power Amp 900 MHz

AWT921S11_2678537.PDF Datasheet


 Full text search : Integrated High Power Amp 900 MHz


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AWT9221S11 AWT921S11 Integrated high power amp 900 MHz
Integrated High Power Amp 900 MHz Advanced Product information
Anadigics Inc
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MOTOROLA[Motorola, Inc]
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ANADIGICS, Inc.
AWT1921S11 Integrated High Power Amp 1610 MHz Advanced Product information
Anadigics Inc
ANADIGICS, Inc.
ANADIGICS Inc
MAX16814AUP Integrated, 4-Channel, High-Brightness LED Driver with High-Voltage DC-DC Controller; Package: TSSOP-EP;20 pin;43 mm² ; Temperature: -40°C to 125°C LED DISPLAY DRIVER, PDSO20
Maxim Integrated Products, Inc.
LT1226CS8TR LT1122CCS8 Low Noise Very High Speed Operational Amplifier; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C OP-AMP, 1000 uV OFFSET-MAX, 1000 MHz BAND WIDTH, PDSO8
OP-AMP, 900 uV OFFSET-MAX, 13 MHz BAND WIDTH, PDSO8
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
TC1426CPA TC1427 TC1427CPA TC1428 TC1428COA TC1427 CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 600 A rms nominal, ±900 A range 1.2A的双路高速MOSFET驱动
1.2A Dual High-Speed MOSFET Drivers 1.2A的双路高速MOSFET驱动
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ...
Microchip Technology, Inc.
MICROCHIP[Microchip Technology]
APT36N90BC3G Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Microsemi Corporation
Microsemi, Corp.
MRFIC2101 900 MHz TX-MIXER/EXCITER SILICON MONOLITHIC INTEGRATED CIRCUIT
Motorola, Inc
 
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