| PART |
Description |
Maker |
| HB56G51232SB-7CL HB56G51232SB-8CL HB56G51232B-7C |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Analog Devices, Inc.
|
| HB56TW432D-7L HB56TW433D-6 HB56TW433D-7 HB56TW433D |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
BRILLIANCE SEMICONDUCTOR, Inc.
TE Connectivity, Ltd.
|
| HYM532256ALM-60 HYM532256ALM-80 HYM532256ALM-70 HY |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
LG, Corp.
|
| HB56G232B-6 HB56G132B-6 HB56G232B-6L |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Bourns, Inc.
|
| IBM11S1320LLB-70 IBM11S1320LNA-60 IBM11S1320LLB-60 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
AMIC Technology, Corp.
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| HB56U432SB-6N HB56U832B-5NL HB56U832B-7NL |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Altera, Corp.
|
| MSC2323258A MSC2323258A-XXBS4 MSC2323258A-XXDS4 |
2097152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
DPDT 10A MINI 24VDC 2097152字32位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| GMM791000CNS-80 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
|
NXP Semiconductors N.V.
|
| GMM791000ENS-80 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
|
NXP Semiconductors N.V.
|
| HB56A49AT-8 HB56A49GBR-6A HB56A49ATR-6A HB56A49AR- |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
x(8 1) Fast Page Mode DRAM Module × 1）快速页面模式内存模
|
Vishay Intertechnology, Inc.
Analog Devices, Inc.
|
