PART |
Description |
Maker |
PM39LV010 PM39LV512-70JCE PM39LV010-70VC PM39LV010 |
(PM39LV010 - PM39LV512) 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
|
PMC-Sierra, Inc.
|
LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位(512 KB的16)SmartVoltage闪存 RES CURRENT SENSE .025 OHM 1W 1% 8 M位(512 KB的16)SmartVoltage闪存 8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位(512 KB的16)SmartVoltage闪存
|
http:// Sharp, Corp. Sharp Corporation Sharp Electrionic Compo...
|
S7171-0909-01 |
512 × 512 pixels, back-thinned FFT-CCD
|
Hamamatsu Corporation
|
LH540225 |
512 x 18 / 1024 x 18 Synchronous FIFO 512 ×一千?二十四分之一十八× 18同步FIFO
|
Sharp, Corp.
|
CY7C421-15AXC CY7C421-20VXC |
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 15 ns, PQFP32 256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 20 ns, PDSO28
|
Cypress Semiconductor, Corp.
|
28C04A-15_L 28C04A-15_P 28C04A-25_L 28C04A-25_P 28 |
512 X 8 EEPROM 5V, 250 ns, PQCC32 4K (512 x 8) CMOS EEPROM
|
MICROCHIP[Microchip Technology]
|
PCF8594C-2T/02112 |
512 x 8-bit CMOS EEPROM with I2C-bus interface; Package: SOT96-1 (SO8); Container: Tube 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
NXP Semiconductors N.V.
|
28C04AFTI/L 28C04AFI/P 28C04AI/P 28C04AI/L 28C04AF |
4K (512 x 8) CMOS EEPROM 4K的(512 × 8)的CMOS EEPROM
|
Microchip Technology Inc. Microchip Technology, Inc.
|
CY7C443 CY7C441 7C441 |
Clocked 2K x 9 FIFOs(2Kx 9定时的先进先 Clocked 512 x 9 FIFOs(512 x 9定时的先进先 From old datasheet system Clocked 512 x 9, 2K x 9 FIFOs
|
Cypress Semiconductor Corp.
|
IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V 3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 11C 11#16 SKT RECP BOX RM 3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9 3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9 GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32 GT 7C 7#16S PIN RECP 3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 8C 8#16 SKT RECP WALL GT 3C 3#16S PIN RECP WALL GT 4C 4#12 PIN PLUG 3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
|
CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM(FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM)的
|
Cypress Semiconductor Corp.
|
S7171-0909 S7170-0909 |
CCD area image sensor 512 × 512 pixels, Back-thinned FFT-CCD CCD area image sensor 512 】 512 pixels, Back-thinned FFT-CCD
|
http:// Hamamatsu Corporation
|