| PART |
Description |
Maker |
| CM800E2Z-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400DY-66H |
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
|
| CM100HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400HB-90H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
400 A, 4500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| IRGBC20K-S |
Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 8200uF; Voltage: 400V; Case Size: 76.2x170 mm; Packaging: Bulk
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A)
|
IRF[International Rectifier]
|
| NTE3312 NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
| NTE3322 NTE3321 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
