| PART |
Description |
Maker |
| IXFH12N50F IXFT12N50F |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFR55N50F |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching
|
IXYS[IXYS Corporation]
|
| IXFK44N50F09 IXFX44N50F |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching
|
http://
IXYS Corporation
|
| IXFK40N50Q2 |
HiPerFET Power MOSFET Q2-Class
|
IXYS Corporation
|
| IXFR32N80Q3 |
HiperFET Power MOSFET Q3-Class
|
IXYS Corporation
|
| IXFN82N60Q3 |
HiperFET Power MOSFET Q3-Class
|
IXYS Corporation
|
| IXFL70N60Q2 |
HiPerFET Power MOSFET Q2-Class
|
IXYS Corporation
|
| IXFN100N50Q3 |
HiperFET Power MOSFET Q3-Class
|
IXYS Corporation
|
| IXFT16N90Q IXFH16N90Q IXFK16N90Q |
HiPerFET Power MOSFETs Q-Class 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 |
RF Power Field Effect Transistors
The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications
|
Freescale Semiconductor, Inc
MOTOROLA
|
