| PART |
Description |
Maker |
| 2SA1036K 2SA854 2SA854S 2SA1577 A5800307 |
Medium Power Transistor (-32V/ -0.5A)
Medium Power Transistor (-32V, -0.5A)
From old datasheet system
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
| 2SB113209 2SB1132 2SA1515S 2SB1237 2SB1132T100P |
Medium Power Transistor (-32V, -1A)
Medium Power Transistor (-32V,?1A)
|
Rohm
|
| 2SB1240 2SB1182 |
Medium power transistor (-32V, -2A)
|
Rohm
|
| L2SD1781KQLT3G L2SD1781KQLT1G L2SD1781KQLT1G11 L2S |
Medium Power Transistor (32V, 0.8A) High current capacity in compact
|
Leshan Radio Company
|
| 2DB1188P-13 2DB1188Q 2DB1188Q-13 2DB1188R 2DB1188R |
32V PNP MEDIUM POWER TRANSISTOR IN SOT89
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
|
Diodes Incorporated
|
| 2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
MEDIUM POWER TRANSISTOR 中功率晶体管
|
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UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G4003532-FL-15 T1G4003532-FS T1G4003532-FL-EVB1 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G6001032-SM-15 T1G6001032-SM-EVB1 |
10W, 32V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
