| PART |
Description |
Maker |
| 30KPA54A 30KPA84A 30KPA84C 30KPA132CA 30KPA43 30KP |
Diode TVS Single Uni-Dir 54V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 43V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 320V 30KW 2-Pin
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600
Diode TVS Single Bi-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 42V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 71V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
| BAR64V-03 |
RF PIN Diode - Single in SOT-23
|
Vishay
|
| BAR63V-03-GS08 BAR63V-03-GS18 BAR63V-03 |
RF PIN Diode - Single in SOT-23
|
Vishay Siliconix
|
| PIC16F636E/MF PIC16F636E/MFQTP PIC16F636E/P PIC16F |
Triple 4-3-3-Input NOR Gate; Package: SOEIAJ-16; No of Pins: 16; Container: Rail; Qty per Container: 50
DIODE ZENER SINGLE 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-323 3K/REEL
DIODE ZENER SINGLE 150mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-363 3K/REEL
DIODE ZENER SINGLE 350mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-23 3K/REEL
DIODE ZENER SINGLE 150mW 3Vz 20mA-Izt 0.05 50uA-Ir 1 SOT-523 3K/REEL
DIODE ZENER SINGLE 350mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-23 3K/REEL
RECTIFIER STANDARD SINGLE 1.5A 600V 600 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-SOIC 0 to 70
RECTIFIER STANDARD SINGLE 1.5A 800V 800 50A-ifsm 5uA-ir 1.1V-vf DO-15 4K/REEL-13
DIODE ZENER DUAL ISOLATED 200mW 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-363 3K/REEL
DIODE ZENER SINGLE 200mW 2.7Vz 20mA-Izt 0.05 75uA-Ir 1 SOT-323 3K/REEL
DIODE ZENER SINGLE 350mW 7.5Vz 20mA-Izt 0.05 3uA-Ir 6 SOT-23 3K/REEL
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER TRIPLE ISOLATED 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER DUAL ISOLATED 200mW 6.8Vz 20mA-Izt 0.05 3uA-Ir 5 SOT-363 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
DIODE ZENER SINGLE 200mW 6.2Vz 20mA-Izt 0.05 5uA-Ir 4 SOT-323 3K/REEL 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
8/14-PIN FLASH-BASED, 8-BIT CMOS MICROCONTROLLERS WITH NANOWATT TECHNOLOGY 8/14-PIN基于闪存8位CMOS微控制器采用纳瓦技
Buck Pulse Width Modulator Stepdown Voltage Regulator 16-PDIP 0 to 70 8/14-PIN基于闪存位CMOS微控制器采用纳瓦技
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| 1N3802B 1N3819A 1N3819B 1N3800 1N3804B 1N3797B 1N3 |
Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35
Diode 100V 275A 2-Pin DO-9
Diode Zener Single 6.7V 5% 400mW 2-Pin DO-7
|
New Jersey Semiconductors
|
| MTAN4139-AHR MTAN4139-AO MTAN4139-CHR MTAN4139-CO |
Marktech 0.39 Single Alpha Numeric
DIODE ZENER DUAL ISOLATED 200mW 11Vz 20mA-Izt 0.05 2uA-Ir 8.4 SOT-363 3K/REEL
DIODE ZENER SINGLE 200mW 10Vz 20mA-Izt 0.05 3uA-Ir 8 SOT-323 3K/REEL
0.39 Single Digit Alpha Numeric Display 0.39单位字母数字显示
|
MARKTECH[Marktech Corporate]
Marktech Optoelectronics
|
| K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D2632 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| EN4510E EN4510 |
PIN Diode, 50V, 50mA, rs=2.5 Ohm(typ), Single MCP
Pin Diode for VHF, UHF, AGC Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| MAX6575 MAX6575H MAX6575HZUT MAX6575L MAX6575LZUT |
DIGITAL TEMP SENSOR-SERIAL, 5Cel, RECTANGULAR, SURFACE MOUNT SOT-23, 6 PIN
SOT Temperature Sensor with Multidrop Single-Wire Digital Interface
SOT Temperature Sensor with Multidrop Single Wire Digital Interface
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| H11A2 H11A3 4N35H11A4 H11A4 4N37 H11A1V 4N37.3SD 4 |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
6-Pin DIP Package Phototransistor Output Optocoupler
DIODE SWITCHING SINGLE 200V 200mA-Io 200mW 50ns-trr SOT-323 3K/REEL
DIODE SWITCHING DUAL ISOLATED 250V 200mA-Io 200mW 50ns-trr SOT-363 3K/REEL
DIODE SCHOTTKY 40V 200MA SOT523
0.5mm Pitch DIL Vertical SMT Female Assembly, 4mm height, location pegs, hold-down tabs, tin, 5 5-way, Tape & Reel packing
KPT06A18-11SF26F97
DIODE ZENER SINGLE 200mW 22Vz 5mA-Izt 0.0567 0.1uA-Ir 15.4 SOT-323 3K/REEL
CONNECTOR ACCESSORY
Tuner custom IC 32-TSSOP
DIODE SWITCHING SINGLE 250V 200mA-Io 200mW 50ns-trr SOT-323 3K/REEL
DIODE SWITCHING SINGLE 120V 200mA-Io 200mW 50ns-trr SOT-323 3K/REEL
Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Fluoropolymer; Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:30V RoHS Compliant: Yes
Dual Pole Combination: Form-A & B
Incandescent Lamp; Supply Voltage:30VDC; Lamp Base Type:Bayonet; Power Rating:10W; Bulb Size:T-20; Average Rated Bulb Life:2000h; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
OSC 5V SMT 7X5 CMOS PROGRM
IC,MODEM,CODEC,CSP1034S,38P,TSSOP 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 一般用途的6引脚光电晶体管光电耦合
KPT06F12-3SF187 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
0.5mm Pitch DIL Vertical SMT Female Assembly, 4mm height, location pegs, hold-down tabs, tin, 5 5-way, Tape & Reel packing 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
INDUCTOR, 10UH 20%
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
光电耦合
Fairchild Semiconductor, Corp.
|
