| PART |
Description |
Maker |
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns
1M x 4 Bit EDO DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM
1M x 4 Bit EDO DRAM 3.3 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HSD8M64D8A HMD8M64D8A-10 HMD8M64D8A-10H HMD8M64D8A |
Synchronous DRAM Module 64Mbyte (8Mx64bit),DIMM, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,...
HANBIT[Hanbit Electronics Co.,Ltd]
|
| HSD8M64D4B-10 HSD8M64D4B-10L HSD8M64D4B-13 HSD8M64 |
Synchronous DRAM Module 64Mbyte (8Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HSD8M64B8W-10 HSD8M64B8W-10L HSD8M64B8W-12 HSD8M64 |
Synchronous DRAM Module 64Mbyte(8Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HYB3164165BTL-60 HYB3164165BTL-50 HYB3164165BTL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-version)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HSD16M32F4V HSD16M32F4V-10 HSD16M32F4V-10L HSD16M3 |
Synchronous DRAM Module 64Mbyte ( 16M x 32-Bit ) SMM based on 16Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| SMC128BFY6 SMC128BFY6E SMCXXXBF SMC01GBFY6 SMC01GB |
32MByte, 64MByte, 128MByte, 256MByte, 512MByte, 1GByte, 2GByte, and 4GByte 3.3/5V Supply CompactFlash⑩ Card
|
STMICROELECTRONICS[STMicroelectronics]
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
