| PART |
Description |
Maker |
| 193AB2500B 193AB1500B 192AB2000B |
HEATSINK 0.32C/W
HEATSINK 0.4C/W 散热.4C /
HEATSINK 0.62C/W 散热.62C /
|
JKL Components, Corp.
AVX, Corp.
|
| PSMN034-100PS |
N-channel 100 V 34.5 m惟 standard level MOSFET in TO220.
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
N-channel 100 V 34.5 m standard level MOSFET in TO220. 32 A, 100 V, 0.0345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| AOT292 AOT292L |
TO220 PACKAGE MARKING DESCRIPTION
|
Alpha & Omega Semiconductors
|
| RNP50UA0R1J000 RNP50UC101F010 RNP50UC500F000 RNP50 |
50W TO220 HIGH POWER RESISTORS
|
DBLECTRO[DB Lectro Inc]
|
| PSMN4R3-80PS-15 |
N-channel 80 V, 4.3 m standard level MOSFET in TO220
|
NXP Semiconductors
|
| SB30-100RM SB30-100MA SB30-100AM |
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS
DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
|
SEME-LAB[Seme LAB]
TT electronics Semelab, Ltd.
|
| PSMN016-100PS |
N-channel 100V 16 mΩ standard level MOSFET in TO220
N-channel 100V 16 m楼? standard level MOSFET in TO220
|
NXP Semiconductors
|
| PSMN027-100PS |
N-channel 100V 26.8 mΩ standard level MOSFET in TO220
N-channel 100V 26.8 m楼? standard level MOSFET in TO220
|
NXP Semiconductors
|
| SGP30N60HS |
IGBTs & DuoPacks - 30A 600V TO220 IGBT
|
Infineon
|
| NJM2399 |
Switching Regulator IC / TO220-5Pin(Forming Type)
|
JRC
|
| E504100V1EN1S E504160Z1EN1S E504120X1EN1S E504160Y |
Silicon Power Rectifier Assemblies Plate Heatsink 3 PHASE, SILICON, BRIDGE RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink 3 PHASE, SILICON, RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink SILICON, BRIDGE RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink SILICON, RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink SILICON, VOLTAGE MULTIPLIER DIODE
|
Microsemi, Corp.
MICROSEMI CORP-COLORADO
MICROSEMI CORP-LAWRENCE
|
