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S25FL001D0FMAI011 - INDUCTOR,STANDARD WOUND,0806,22UH 10% ,T&R RoHS Compliant: Yes INDUCTOR,STANDARD WOUND,0806,47UH 10% ,T&R RoHS Compliant: Yes 2兆位兆闪存的CMOS 3.0伏，25兆赫的SPI总线接口内存 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface 2M X 1 SPI BUS SERIAL EEPROM, PDSO8 1M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| Full text search : INDUCTOR,STANDARD WOUND,0806,22UH 10% ,T&R RoHS Compliant: Yes INDUCTOR,STANDARD WOUND,0806,47UH 10% ,T&R RoHS Compliant: Yes 2兆位兆闪存的CMOS 3.0伏，25兆赫的SPI总线接口内存 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface 2M X 1 SPI BUS SERIAL EEPROM, PDSO8 1M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| Product Description search : INDUCTOR,STANDARD WOUND,0806,22UH 10% ,T&R RoHS Compliant: Yes INDUCTOR,STANDARD WOUND,0806,47UH 10% ,T&R RoHS Compliant: Yes 2兆位兆闪存的CMOS 3.0伏，25兆赫的SPI总线接口内存 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface 2M X 1 SPI BUS SERIAL EEPROM, PDSO8 1M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
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