| PART |
Description |
Maker |
| EPM7256AETC14410 EPM7128AETC100-10 EPM7064AETC |
IC,COMPLEX-EEPLD,256-CELL,10NS PROP DELAY,QFP,144PIN,PLASTIC
IC,COMPLEX-EEPLD,128-CELL,10NS PROP DELAY,TQFP,100PIN,PLASTIC
IC,COMPLEX-EEPLD,64-CELL,10NS PROP DELAY,TQFP,44PIN,PLASTIC
|
Altera
|
| RH1016 |
Precision 10ns Comparator
|
Linear Technology
|
| ATF2500C-10JC |
IC CPLD EE 10NS 44PLCC EE PLD, 10 ns, PQCC44
|
Atmel, Corp.
|
| 0472660011 |
0.50mm (.020") Pitch HDMI* Receptacle, Right Angle, Black, Through Hole Shell Tab Length 1.90mm (.075"), 0.76渭m (30渭") Gold (Au) Selective Plating, Matt Tin Pla
|
Molex Electronics Ltd.
|
| ISPLSI1016EA-100LJ44 |
IC,COMPLEX-EEPLD,64-CELL,10NS PROP DELAY,LDCC,44PIN,PLASTIC
|
lattice
|
| MAX7000 MAX7000S EPM7128E EPM7128S EPM7256E EPM725 |
Programmable logic , 128 macrocells, 8 logic array blocks, 68 I/O pins, 10ns
MAX 7000 Programmable Logic Device Family
|
ATERA
Altera Corporation
|
| AS7C256A AS7C256A-10JC AS7C256A-15JCN AS7C256A-15J |
IC,AS7C256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,5V
5V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 20 ns, PDSO28
SRAM - 5V Fast Asynchronous
|
ALLIANCE MEMORY INC
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| 5962-88724013X 5962-88724043X 5962-87539053X 5962- |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; V power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
|
Atmel
|
| GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| AM79R79-3JC AM79R79-4JC AM79R79-1JC |
10NS, TSSOP, COM TEMP(EPLD) 通信集成电路
15NS, PLCC, COM TEMP(EPLD) 15NS, PLCC, COM TEMP(EPLD)
Telecommunication IC
|
Integrated Device Technology, Inc.
Advanced Micro Devices, Inc.
|
| 15-80-0125 0015800125 70567-0140 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.76渭m (30渭") Gold (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
|
