PART |
Description |
Maker |
BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
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NXP Semiconductors N.V.
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K9KAG08U0MPIB00 K9KAG08U0M-PCB0000 K9KAG08U0MPCK00 |
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Samsung semiconductor
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TMP86C847 TMP86C846 TMP86CH46 TMP86CH47 TMP86CK74 |
The product information available by this search method contains an overview of each product only.
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TOSHIBA
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BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
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LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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Polyfet RF Devices
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MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
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MOTOROLA[Motorola, Inc] Motorola, Inc.
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EM73963A |
4-Bit Microcontroller For LCD Product 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT
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EMC[ELAN Microelectronics Corp]
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