PART |
Description |
Maker |
HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC 4 Banks X 8M X 8Bit Synchronous DRAM SDRAM - 256Mb
|
Hynix Semiconductor
|
IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM x8 SDRAM x8 SDRAM内存 x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc. Hanbit Electronics Co., Ltd.
|
HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512M; 100MHz LVTTL interface SDRAM 512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
IDT71V321L25JI IDT71V321S25PF IDT71V321L25PF IDT71 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT 2K X 8 DUAL-PORT SRAM, 25 ns, PQFP64 HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT 的高速中3.3VK × 8双端口静态RAM 2K x 8 3.3V Dual-Port RAM From old datasheet system
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
HY57V28820HCT-H HY57V28820HCLT-K |
x8 SDRAM From old datasheet system SDRAM,4X4MX8,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
HYB39S256160CT-8A HYB39S256160CTL-8A HYB39S256800C |
x16 SDRAM 179 POS FR-4 PGA SOCKET x8 SDRAM x8 SDRAM内存
|
Infineon Technologies AG
|
W9816G6BB-7 W9816G6BB |
BGA SDRAM 512K X 2 BANKS X 16 BITS SDRAM From old datasheet system
|
Winbond Electronics
|
K4S161622H |
16Mb H-die SDRAM Specification IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
IBM13T8644HPC IBM13T8644HPB IBM13T8644HPB-10T |
8M x 64 SDRAM SO DIMM(Small Outline Dual In-line Memory Modules8M x 64 144脚小外形双列直插同步动态RAM模块) x64 SDRAM Module X64的内存模
|
IBM Microeletronics 飞思卡尔半导体(中国)有限公司
|