| PART |
Description |
Maker |
| UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
|
NEC, Corp.
Infineon Technologies AG
|
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| HYB39S64160BTL-7.5 |
x16 SDRAM x16内存
|
Infineon Technologies AG
|
| 64M16 256M4 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| MT47H64M16HR-25ELH |
1Gb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| MT41J128M8 128M8 MT41J256M4 MT41J64M16 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| HYB18T512161BF-26 HYB18T512161BF-28 |
512-Mbit x16 DDR2 SDRAM
|
http://
|
| MT48LC64M4A299 |
Synchronous DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
