| PART |
Description |
Maker |
| WG14013FR04 WG12013FR02 WG18015R FR35 WG18027R12 W |
1340 A, 1300 V, GATE TURN-OFF SCR
2150 A, 1500 V, SYMMETRICAL GTO SCR
820 A, 4000 V, GATE TURN-OFF SCR
1685 A, 2700 V, GATE TURN-OFF SCR
870 A, 600 V, GATE TURN-OFF SCR
700 A, 600 V, GATE TURN-OFF SCR
730 A, 1000 V, GATE TURN-OFF SCR
890 A, 1000 V, GATE TURN-OFF SCR
|
WESTCODE SEMICONDUCTORS LTD
|
| WG1204301 WG20042R23 WG12032R23 WESTCODESEMICONDUC |
4300 V, GATE TURN-OFF SCR
4200 V, GATE TURN-OFF SCR
3200 V, GATE TURN-OFF SCR
1400 V, GATE TURN-OFF SCR
3400 V, GATE TURN-OFF SCR
4100 V, GATE TURN-OFF SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| MCR100-8 |
Standard Gate SCR
|
DnI
|
| DCP20C60 |
Standard Gate SCR
|
DnI
|
| BD814 BD844 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|02AA
|
Teridian Semiconductor, Corp.
|
| N275CH04 N275CH04LOO N275CH04KOO N275CH04HOO N275C |
769.3 A, 400 V, SCR, TO-200AB
5565.65 A, 400 V, SCR
1640.65 A, 600 V, SCR, TO-200AC
36.11 A, 1200 V, SCR, TO-48
2614.05 A, 1400 V, SCR
3799.4 A, 3400 V, SCR
2610.91 A, 2600 V, SCR
133.45 A, 800 V, SCR
4474.5 A, 4200 V, SCR
3925 A, 4500 V, SCR
3925 A, 4400 V, SCR
2692.55 A, 1600 V, SCR
70.65 A, 200 V, SCR, TO-65
3595.3 A, 400 V, SCR
3595.3 A, 200 V, SCR
4003.5 A, 2800 V, SCR
1428.7 A, 1800 V, SCR, TO-200AC
1428.7 A, 1600 V, SCR, TO-200AC
612.3 A, 1600 V, SCR
32.97 A, 1000 V, SCR, TO-48
98.91 A, 1000 V, SCR, TO-65
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| BD828-10 BD826-6 BD826-16 BD830-10 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1.5AI（丙）|02
|
Analog Devices, Inc.
|
| 2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92
Silicon Controlled Rectifier .8A 25V
Thyristor .8A 200V
Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IZF1167-7F25 IZF1167-3F25 IZF1167-12F25 IZF1167-10 |
2390 A, 700 V, SCR
2390 A, 300 V, SCR
2390 A, 1200 V, SCR
2390 A, 1000 V, SCR
2390 A, 900 V, SCR
1470 A, 800 V, SCR
1950 A, 1000 V, SCR
1950 A, 1100 V, SCR
1370 A, 1400 V, SCR
1470 A, 500 V, SCR
2835 A, 1100 V, SCR
1370 A, 1200 V, SCR
1470 A, 200 V, SCR
|
ITT, Corp.
|
| N0676YS120-180 N0782YS120-160 N0992YS020-060 N0734 |
1346 A, 1800 V, SCR
1554 A, 1600 V, SCR
1995 A, 600 V, SCR
1465 A, 1600 V, SCR
1201 A, 2400 V, SCR
|
Westcode Semiconductors, Ltd.
|
| 160PFT100A 160PFT160 160PFT120A 160PFT140 |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1600V; 600A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1400V; 600A I(tgq) gate turn-off hockey puk SCR
|
International Rectifier
|
|
