| PART |
Description |
Maker |
| TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| UPG2024TQ-E1-A |
GaAs MMIC SPDT switch for 5 GHz band.
|
NEC
|
| MGFK35V2228 |
12.2-12.8 GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MAAM02350-A2 MAAM02350-A2G |
Wide Band GaAs MMIC Amplifier 0.2 - 3.0 GHz
|
M/A-COM Technology Solutions, Inc.
|
| MGFK30V4045 |
14.0-14.5 GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK33V4045 |
14.0-14.5 GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFS45V2735 |
2.7-3.5 GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC45V5964A_04 MGFC45V5964A MGFC45V5964A04 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
