PART |
Description |
Maker |
NL10276BC28-05D |
36 cm 14.1 inches, 1024 x 768 pixels, 262,144 colors, LVDS Interface, High luminance
|
NEC[NEC]
|
NL10276AC28-01L |
36 cm 14.1 inches, 1024 x 768 pixels, Full-color, Multi-scan function, Built-in CRT interface board
|
NEC Corp.
|
TF-AOP-8150HT-A1-1010 TF-AOP-8150HT-P1-1010 |
15 TFT XGA (1024 x 768) LCD
|
AAEON Technology
|
AM81C478-35JCB |
1024 X 768 PIXELS PALETTE-DAC DSPL CTLR, PQCC44
|
ADVANCED MICRO DEVICES INC
|
72V73273BBBLANK IDT72V7327307 |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH WITH RATE MATCHING 32,768 X 32,768 CHANNELS
|
http:// Integrated Device Technology
|
TH7887AVRH TH7887A |
From old datasheet system Area Array CCD Image Sensor 1024 x 1024 Pixels with Antiblooming
|
ATMEL Corporation
|
KAF-1001E |
1024(H) x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification From old datasheet system
|
List of Unclassifed Manufacturers ETC[ETC]
|
TH7888AVRH TH7888AVRHRB TH7888A TH7888AVRHN |
Area Array CCD, 1024 x 1024 pixels with Antiblooming, 2 x 20 MHz AREA ARRAY CCD IMAGE SENSOR 1024 X 1024 PIXELS WITH ANTIBLOOMING Area Array CCD Image Sensor (1024 x 1024 Pixels with Antiblooming)
|
ATMEL[ATMEL Corporation]
|
AMD27C256 AM27C256-120 AM27C256-120EC AM27C256-120 |
256 Kilobit (32,768 x 8-Bit) CMOS EPROM Circular Connector; No. of Contacts:5; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 8-input positive-NAND gates 14-SO 0 to 70 256千比特(32,768 × 8位)的CMOS存储 256 Kilobit (32,768 x 8-Bit) CMOS EPROM 256千比特(32,768 × 8位)的CMOS存储 256 Kilobit (32,768 x 8-Bit) CMOS EPROM 32K X 8 OTPROM, 90 ns, PDSO32 Quadruple 2-Input Multiplexers With Storage 16-PDIP 0 to 70 8-Line To 3-Line Priority Encoder 16-PDIP 0 to 70 Universal shift / storage registers 20-SOIC 0 to 70 8-input positive-NAND gates 14-SOIC 0 to 70 8-input positive-NAND gates 14-PDIP 0 to 70 8-Line To 3-Line Priority Encoder 16-SO 0 to 70 Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70 256 Kilobit (32/768 x 8-Bit) CMOS EPROM
|
Cypress Semiconductor, Corp. Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
KT872N15 KT872N55 KT872P51 KT872P55 KT872T55 KT872 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .320 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter . Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture in front of sensor .050inches. Aperture width in front of emitter Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320inches. Aperture in front of sensor .050inches. Aperture in front of emitter .050i Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture width in front of sensor .050inches. Aperture in front of emitter Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .0 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
|
Optek Technology
|