PART |
Description |
Maker |
GM9014 |
Excellent HFE Linearity HFE : HFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
2SC4666 |
High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max)
|
TY Semiconductor Co., Ltd
|
2SC3071 |
High-hFE/ Low-Frequency General-Purpose Amp Applications NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications NPN Epitaxial Planar Silicon Transistor for High hFE, Low-Frequency General-Purpose Amplifier Applications(高直流电流增益,低频通用放大器应用的NPN硅外延平面型晶体 瑞展硅晶体管HFE的高,低频通用放大器应用(高直流电流增益,低频通用放大器应用的npn型硅外延平面型晶体管
|
Sanyo Semicon Device Sanyo Electric Co., Ltd.
|
CSC1573R CSC1573AQ |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 100 - 220 hFE. 1.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.070A Ic, 60 - 150 hFE.
|
Continental Device India Limited
|
KTD1003 KTD1003-15 |
EPITAXIAL PLANAR NPN TRANSISTOR High hFE Transistor
|
KEC(Korea Electronics) Korea Electronics (KEC)
|
PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd From old datasheet system
|
NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
|
CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO 25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B 25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238 PNP PLASTIC POWER TRANSISTORS Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
|
Continental Device India Limited
|
CZT250K |
SURFACE MOUNT NPN EXTREMELY HIGH hFE SILICON DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160 QUAD 2-INPUT NOR GATE
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
CP756 |
0.750W High Voltage PNP Plastic Leaded Transistor. 200V Vceo, 0.500A Ic, 40 hFE.
|
Continental Device India Limited
|
2SA1436 0073 |
PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications From old datasheet system
|
Sanyo
|