| PART |
Description |
Maker |
| ICS663 663MILFT 663MLF 663MLFT |
PLL BUILDING BLOCK Phase detector and VCO blocks can be used Lower power CMOS process
|
Integrated Device Technology
|
| AP9404GM-HF AP9404GM-HF14 |
Lower Gate Charge, Fast Switching Characteristic
30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP2605GY0-HF AP2605GY0-HF14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
|
| AP9408GM-HF |
Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP9567GH-HF AP9567GH-HF14 AP9567GJ-HF |
Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| AP2342GK-HF AP2342GK-HF14 |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| AP9563GH09 AP9563GJ09 |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
