| PART |
Description |
Maker |
| 2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五（巴西）总裁|8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 500mA的一（c）|
|
Central Semiconductor, Corp.
Microsemi, Corp.
|
| BFT70 BFX80 BFX36 BFX11 BFX79 BFX81 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-18
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-78
晶体管|晶体管|一对|互补| 60V的五（巴西）总裁| 600毫安一（c）|7
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 20V V(BR)CEO | 200MA I(C) | TO-77 晶体管|晶体管|一对|互补| 20V的五（巴西）总裁| 200mA的一（c）|7
|
TT electronics Semelab, Ltd.
|
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| 2SA1834R 2SB1516P 2SB1516Q 2SB1516N 2SC5119 2SD211 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 15A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-252VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
µP Supervisory Circuits in 4-Bump (2 x 2) Chip-Scale Package
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252VAR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五（巴西）总裁|5A一（c）|52VAR
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252VAR 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 4A条一（c）|52VAR
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-252VAR 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|甲一（c）|52VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 6A I(C) | TO-252VAR 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 6A条一（c）|52VAR
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-252VAR
|
Semtech, Corp.
Maxim Integrated Products
Rochester Electronics, LLC
Amphenol, Corp.
|
| FXT2907SM FXT605SM |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | SO
TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|达林顿| npn型| 120伏特五（巴西）总裁| 1A条一（c）|
|
Electronic Theatre Controls, Inc.
|
| 2N2906ADCSM |
TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 600MA I(C) | LLCC
Dual Bipolar PNP Devices in a hermetically sealed
|
Seme LAB
|
| KSP4250A |
TRANSISTOR,BJT,PNP,60V V(BR)CEO,TO-92
From old datasheet system
|
Samsung Electronics Inc
|
| GES5817J1 GES6221J1 GES6016J1 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | TO-92 晶体管|晶体管|进步党| 40V的五（巴西）总裁|92
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-92 晶体管|晶体管| npn型| 150伏五（巴西）总裁|92
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92 晶体管|晶体管|叩| 60V的五（巴西）总裁|2
|
Integrated Device Technology, Inc.
Central Semiconductor, Corp.
|
| MMST5086 MMST5087 MMST5088 MMST5089 MMST7157 SST71 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
EZ-USB SX2™ High-Speed USB Interface Device
KIT EZ-USB SX2 DEVELOPMENT
IC, STATIC RAM, 512K X 8
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 500MA I(C) | SOT-23
Low-Cost 3.3V Zero Delay Buffer
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 50MA I(C) | SOT-23VAR
PCIX I/O System Clock Generator with EMI Control Features
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 200MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 600MA I(C) | SOT-23
4-Mbit (128K x 36) Pipelined Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
KIT DEVELOPMENT EZ-USB FX2LP
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | SOT-23VAR
TRANSISTOR|BJT|NPN|25VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|NPN|30VV(BR)CEO|200MAI(C)|SOT-23VAR
TRANSISTOR|BJT|PNP|50VV(BR)CEO|200MAI(C)|SOT-23VAR
|
|
| BD179-6 BD175-16 BD178-6 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）|26
|
Motorola Mobility Holdings, Inc.
|
| BCX76-40 BF413 BC140-25 BC537-16 MPS6573 BC328-10 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 50MA I(C) | TO-92
Stratix II GX FPGA 130K FPGA-1508
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 200MA I(C) | TO-92
IC MAX 7000 CPLD 64 44-TQFP
IC FLEX 10KA FPGA
Cyclone II FPGA 50K FBGA-484
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92
2GB DDR2 SDRAM VLP DIMM
MAX 7000 CPLD 128 MC 100-TQFP
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-37
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-92
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
Cyclone FPGA 6K PQFP-240
CYCLONE III FPGA 119K 484FBGA
MAX 7000 CPLD 64 MC 100-TQFP
MAX 3000A CPLD 32 MC 44-TQFP
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
TRANSISTOR | BJT | NPN | 1A I(C) | TO-105
Dual Matched Amplifiers with Digitally Programmable Gain in MSOP; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C
IC MAX 7000 CPLD 128 144-TQFP
MAX II CPLD 1270 LE 144-TQFP
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:220; Package/Case:484-FBGA; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Leaded Cartridge Fuse; Current Rating:12A; Voltage Rating:32V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:32V; Body Material:Glass; Diameter:6.985mm; Leaded Process Compatible:Yes; Length:32.385mm; Series:315P RoHS Compliant: Yes
TRANSISTOR | BJT | PNP | 6V V(BR)CEO | TO-18 晶体管|晶体管|进步党| 6V的五（巴西）总裁|8
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管|叩| 18V的五（巴西）总裁| 100mA的一（c）|2
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | TO-92 晶体管|晶体管|进步党| 25V的五（巴西）总裁|2
MAX 7000 CPLD 512 MC 208-PQFP 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|2
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 1A条一（c）|2
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | TO-18
|
EM Microelectronic
Bourns, Inc.
SEMIKRON
Samsung Semiconductor Co., Ltd.
California Eastern Laboratories, Inc.
|
