| PART |
Description |
Maker |
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
|
Micron Technology
|
| HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40
DRAM / FAST PAGE MODE TYPE
262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD
OKI electronic componets
|
| AS4C256K16E0 |
5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM（扩展数据总线
|
Alliance Semiconductor Corporation
|
| AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
4M x 4 CMOS DRAM (EDO) Family
|
Integrated Silicon Solution, Inc.
Alliance Semiconductor
|
| V53C832HU50 |
256K X 32 EDO DRAM, 50 ns, PQFP100
|
MOSEL-VITELIC
|
| AS4LC256K16E0 |
3.3V 256K X 16 CMOS DRAM (EDO)
|
Alliance Semiconductor
|
| EM614163 EM614163A EM614163A-30 EM614163A-35 EM614 |
256K X 16 HIGH SPEED EDO DRAM
|
ETC[ETC]
|
