| PART |
Description |
Maker |
| HMC1010LP4E |
RMS POWER DETECTOR DC - 3.9 GHz
|
Hittite Microwave Corporation
|
| HMC-C054 |
RMS POWER DETECTOR 70 dB, 0.01 - 2 GHz
|
Hittite Microwave Corporation
|
| HMC1020LP4E |
RMS POWER DETECTOR SINGLE-ENDED, DC - 3.9 GHz
|
Hittite Microwave Corporation
|
| LT5581 LT5581IDDB-PBF LT5581IDDB-TRPBF |
6GHz RMS Power Detector with 40dB Dynamic Range
|
Linear Technology
|
| AD737 AD737AQ AD737BQ AD737JN AD737JR AD737JR-REEL |
Low Cost, Low Power, True RMS-to-DC Converter
622Mbps, Ultra-Low-Power, 3.3V Transimpedance Preamplifier for SDH/SONET
Low Cost/ Low Power/ True RMS-to-DC Converter
Low Cost, Low Power, True RMS-to-DC Converter RMS TO DC CONVERTER, 0.005 MHz, PDSO8
|
AD[Analog Devices]
Analog Devices, Inc.
|
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| LTC3201 LTC5505-1 LTC5505-1ES5 LTC5505-2 LTC5505-2 |
RF Power Detector with Buffered Output and 40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C 300 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, 18 dBm INPUT POWER-MAX
|
LINER[Linear Technology]
Linear Technology, Corp.
|
| P2020RDB-PCA |
P2 Platform Series Dual core performance in a single core power envelope
|
Freescale Semiconductor...
|
| BTA10-800AW BTA10-200AW BTA10-400AW BTA10-700AW BT |
TRIAC|800V V(DRM)|10A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220
TRIAC|700V V(DRM)|10A I(T)RMS|TO-220
Transient Voltage Suppressor Diodes 可控硅| 600V的五（DRM）的| 10A条口（T）的有效值|20
|
Volex PLC
|
| SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五（DRM）的| 300口（T）的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五（DRM）的| 150A口（T）的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五（DRM）的| 300口（T）的有效值|培训基金，一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五（DRM）的|0A口（T）的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
|
| AD637 AD637JD |
500V; 108mW; high precision, wideband true RMS-to-DC converter
High Precision,wide-RMS-to-DC Converter
Complete High Accuracy Monolithic RMS-to-DC Converter.
|
Analog Devices
|
| CEM3312 |
Voltage Controlled Envelope Generator
|
List of Unclassifed Manufacturers
ETC[ETC]
|
