| PART |
Description |
Maker |
| HMF06020 HMF-06020 HARRISCORPORATION-HMF06020 |
Power Optimized GaAs FET 2-14 GHz 功率优化的砷化镓场效应管2-14千兆
|
Harris, Corp.
HARRIS[Harris Corporation]
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp.
NEC[NEC]
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| CFH2162-P5 |
Power GaAs FET
|
Mimix Broadband
|
| TIM1414-5-252 |
POWER GAAS FET
|
Toshiba Semiconductor
|
| MGF2430A1 MGF2430A |
MICROWAVE POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
