| PART |
Description |
Maker |
| W25X32A |
32M-BIT SERIAL FLASH MEMORY
|
Winbond
|
| MX25L3239E MX25L3239EM2I10G MX25L3239EMBI10G |
32M-BIT [x 1 / x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| W25Q32VZEIG W25Q32VZPIG W25Q32VSFIG W25Q32VSSIG |
32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| W25Q32FVTBIG-TR |
3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
| S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
| W25P10-VNI W25P10-VSNI W25P10-VNIG W25P20-VNI W25P |
1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI
4 Mbit Uniform Sector, Serial Flash Memory
|
Winbond Electronics Corp
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W25Q32DWSSIG-TR |
1.8V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
| NX25F011B NX25F011B-3S NX25F011B-3V NX25F011B-5S N |
1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE
4 Mbit Uniform Sector, Serial Flash Memory
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| MX29LA320MTXBC-90G MX29LA321MTXCC-70R MX29LA320MBX |
32M-BIT [4M x 8/2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
