| PART |
Description |
Maker |
| BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
POWEREX[Powerex Power Semiconductors]
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR5PM |
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR03AM |
LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
| BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR20A BCR20E BCR20C |
MEDIUM POWER USE A/ B/ C : NON-INSULATED TYPE/ E : INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| QM75DY-24B |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RM150DZ-24 RM150DZ-2H RM150DZ-H RM150DZ-M RM150UZ- |
HIGH POWER GENERAL USE INSULATED TYPE
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
BATTERY SLA 12V 7AH .250 TERM 大功率常规使用绝缘型
ADAPTOR 0.187 TO 0.250 TERMINAL 大功率常规使用绝缘型
Insert strip for laser printer, lettering field: 62 x 10 mm - ESL 62 X 10 大功率常规使用绝缘型
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Sem...
|
