| PART |
Description |
Maker |
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
| MSP3407 |
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSC0305W MSC0305W-SOP8 |
-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSC0311WE |
30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| 2SK2731 A5800299 |
Transistors > MOS FET > Small Signal MOS FET
From old datasheet system
Interface and switching (30V, 200mA)
Interface and switching (30V/ 200mA)
|
ROHM[Rohm]
|
| FDD6690S |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-252AA
30V N-Channel PowerTrench SyncFET TM
|
Fairchild Semiconductor
|
| UPA610TA PA610TA D11199EJ1V0DS00 UPA610 |
Small signal MOSFET 6-pin MM -30V/0.1A, 2.5V drive
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
From old datasheet system
|
NEC
|
| RJK03M6DPA RJK03M6DPA-00-J5A |
30V, 30A, 9.4m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0301DPB-02-15 |
30V, 60A, 2.8mΩ max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
