| PART |
Description |
Maker |
| SAB-R3020-25-N Q67120-C556 Q67120-C557 SAB-R2020-1 |
High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-SOIC -55 to 125 高速CMOS逻辑8态输出通用变换缓存SOIC-20封装 工作温度55℃_125
MOSFET N-CH 200V 120A SOT-227B
WRITE BUFFER
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48
4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
|
ATMEL CORP
|
| MM74HCT541 MM74HCT540 MM74HCT541MTC MM74HCT541N MM |
Bipolar Power T0220 PNP 10A 80V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50
Inverting Octal 3-STATE Buffer Octal 3-STATE Buffer
Inverting Octal 3-STATE Buffer Octal 3-STATE Buffer
From old datasheet system
Inverting Octal 3-STATE Buffer • Octal 3-STATE Buffer
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| VM310R-4PO VM310-6PL VM310-6PO VM310R-6PO VM310R-6 |
6-Channel Read/Write Circuit
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Digital Data Communications GmbH
Electronic Theatre Controls, Inc.
|
| BH6625FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read / Write amplifier for FDD
|
ROHM[Rohm]
|
| MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R7 |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119
Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| GS8170DW36AC GS8170DW36AC-250 GS8170DW36AC-350 GS8 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 35.7x1Dp的CMOS的I / O双晚SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 1.8 ns, PBGA209
|
GSI Technology, Inc.
|
| GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
| GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| VM720HN6SSJ VM720L2POJ |
6-Channel Read/Write Circuit
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
Advanced Semiconductor, Inc.
|
| SSI32R2300-4CL SSI32R2300-4CV SSI32R2300R-2CL SSI3 |
4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
2-Channel Disk Read/Write Circuit 2通道磁盘写电
|
HIROSE ELECTRIC Co., Ltd.
|
