| PART |
Description |
Maker |
| IDT72V01 IDT72V01L15J IDT72V01L15J8 IDT72V01L25J I |
3.3 VOLT CMOS ASYNCHRONOUS FIFO 3.3伏的CMOS异步FIFO
1K x 9 AsyncFIFO, 3.3V
512 x 9 AsyncFIFO, 3.3V
|
Integrated Device Technology, Inc.
IDT
|
| CD97-00-1-444 |
IMAGE SENSOR-CCD, 512(H) X 512(V) PIXEL, RECTANGULAR, THROUGH HOLE MOUNT
|
E2V TECHNOLOGIES PLC
|
| S9736 |
CCD area image sensor 512 512 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Photonics
|
| S7171-0909-01 |
512 × 512 pixels, back-thinned FFT-CCD
|
Hamamatsu Corporation
|
| HM1-6642B_883 HM1-6642_883 HM6-6642_883 HM6-6642B_ |
512 x 8 CMOS PROM 512 X 8 OTPROM, 140 ns, CDIP24
512 x 8 CMOS PROM 512 X 8 OTPROM, 220 ns, CDIP24
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IDT72V3642L10PF IDT72V3642L10PQF IDT72V3632 IDT72V |
TV 100C 100#22D SKT PLUG
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 3.3伏的CMOS SyncBiFIFO 256 × 36 × 2 512 × 36 × 2 1024 × 36 × 2
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| XCR3512XL-7PQ208I XCR3512XL XCR3512XL-10FT256I XCR |
XCR3512XL: 512 Macrocell CPLD EE PLD, 10 ns, PBGA324
XCR3512XL: 512 Macrocell CPLD EE PLD, 7.5 ns, PQFP208
XCR3512XL: 512 Macrocell CPLD EE PLD, 10 ns, PBGA256
XCR3512XL: 512 Macrocell CPLD
|
XILINX INC
Xilinx, Inc.
XILINX[Xilinx, Inc]
|
| MC68HC711E20VFS2 MC68HC711E9VFS2 MC68HC711E9VFN2 M |
Microcontroller, 2 MHz, RAM=768, ROM=0, EPROM=20K, EEPROM=512
Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512
Microcontroller, 3 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512
|
Motorola
|
| AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM
SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位）的CMOS存储
Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32
MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| S9736 |
CCD area image sensor 512 × 512 pixels, front-illuminated FFT-CCDs
CCD area image sensor 512 】 512 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Corporation
|
| R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit)
4M SRAM (512-kword 8-bit)
4M SRAM (512-kword × 8-bit)
4M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
|
