| PART |
Description |
Maker |
| 2SC5344 |
0.8A , 35V NPN Plastic-Encapsulate Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| 2SD612K 2SD612 2SB632 2SB632K |
PNP Epitaxial Planar Silicon Transistor for 25V/35V, 2A Low-Frequency Power Amplifier Applications(用于25V/35VA低频功率放大器应用的PNP硅外延平面型晶体
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications
|
Sanyo Electric Co.,Ltd.
|
| 2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
| CN301 CN304 CN300 CN302 CN303 |
0.300W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, A Ic, 50 - 300 hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 20 - hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 50 - 300 hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, A Ic, 50 - 300 hFE
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| 2SA1121 2SA1121SC |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 35V的五（巴西）总裁| 500mA的一（c）| SOT - 23封装
Silicon PNP Epitaxial
Silicon PNP Transistor
|
HIROSE ELECTRIC Co., Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SC2582R 2SC2582Q |
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-126
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 35V的五（巴西）总裁| 1A条一（c）|26
|
Future Technology Devices International, Ltd.
|
| GP30M GP30K GP30J GP30G GP30D GP30 |
SINTERED GLASS PASSIVATED JUNCTION RECTIFIER 烧结玻璃钝化整流
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 1000uF; Voltage: 35V; Case Size: 16x15 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x9 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 12.5x12.5 mm; Packaging: Bulk
|
Zowie Technology Corporatio...
Zowie Technology, Corp.
智威科技股份有限公司
|
| NJW4810GM1 |
35V / 1A H-Bridge Driver
|
New Japan Radio
|
| FDD6635 |
35V N-Channel PowerTrench MOSFET
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| BD90FC0WEFJ BD50FC0WEFJ |
35V Voltage Resistance 1A LDO Regulator
|
Rohm Co., Ltd.
|
| ZXM64N035L3_04 ZXM64N035L3 ZXM64N035L304 |
35V N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
