| PART |
Description |
Maker |
| CJP02N60 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP04N20 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP06N60 |
Power filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP02N60 |
Power Filed Effect Transistor
|
江苏长电科技股份有限公司
|
| MRF21180R6 MRF21180 |
2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| CMT02N60GN220 CMT02N60GN220FP CMT02N60GN251 CMT02N |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
|
| MTV32N25E |
Power Field Effect Transistor
|
ON Semiconductor
|
| MTM40N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| MTP15N15 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTP2N90 MTM2N85 MTM2N90 MTP2N85 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
