| PART |
Description |
Maker |
| HYB39S256160T |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| HYB39S256160CT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| F25L004A |
4Mbit (512Kx8) 3V Only Serial Flash Memory
|
Elite Semiconductor Memory Technology Inc.
|
| AT93C66B-SSHM-T AT93C56B-SSHM-T |
3-wire Serial EEPROM 2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
| M48T35AY04 M48T35AV-10PC1E M48T35AV-10PC1F M48T35A |
REAL TIME CLOCK, PDSO28
5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER㈢ SRAM
5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER庐 SRAM
5.0 or 3.3V, 256 Kbit (32 Kb x8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| M3488Q1 1424 M3488B1 |
256 X 256 DIFGITAL SWITCHING MATRIX
From old datasheet system
256 X 256 DIFGITAL SWITCHING MATRIX
|
ST Microelectronics
STMicroelectronics
|
| SA3488 |
CMOS 256 X 256 DIGITAL SWITCHING MATRIX
|
SAMES[Sames]
|
| X9268US24-2.7 X9268UT24-2.7 X9268UT24I-2.7 INTERSI |
Dual Supply/Low Power/256-Tap/2-Wire Bus DUAL 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO24
Dual Supply/Low Power/256-Tap/2-Wire Bus 双电低Power/256-Tap/2-Wire巴士
|
Intersil, Corp.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| M3488B1 M3488 M3488Q1 |
256 x 256 DIGITAL SWITCHING MATRIX
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
