| PART |
Description |
Maker |
| LH28F400SUHT-NC80 |
4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory
|
Sharp Corporation
|
| IDT72V8985 IDT72V8985DB IDT72V8985J IDT72V8985PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology
IDT
|
| FM22LD16 FM22LD16-55-BG |
4Mbit F-RAM Memory
|
Ramtron International Corporation
|
| FM22L16 FM22L16-55-TG |
4Mbit FRAM Memory
|
Electronic Theatre Controls, Inc.
|
| F25L004A |
4Mbit (512Kx8) 3V Only Serial Flash Memory
|
Elite Semiconductor Memory Technology Inc.
|
| F25L004A-100DG F25L004A-100PAG F25L004A-100PG F25L |
4Mbit (512Kx8) 3V Only Serial Flash Memory
|
Elite Semiconductor Memory Technology Inc.
|
| AT93C66B-SSHM-T AT93C56B-SSHM-T |
3-wire Serial EEPROM 2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
| MT8985 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) Non-blocking Enhance Digital Switch (EDX) with Constant Delay Mode
|
Zarlink Semiconductor
|
| MT89L85 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) 3.3 V Non-blocking Enhance Digital Switch (EDX) with Constant Delay Mode
|
Zarlink Semiconductor
|
| HSDL-3220-021 |
HSDL-3220-021 · 4Mbit/s (FIR) Transceiver Module
|
Agilent (Hewlett-Packard)
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
