| PART |
Description |
Maker |
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V5964A C405964A |
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FLM4450-4F |
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM1011-3F |
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| FLM3439-4F |
C-Band Internally Matched FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLM1414-15F |
X,Ku-Band Internally Matched FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
